Searched refs:eraseblock (Results 1 – 4 of 4) sorted by relevance
60 static unsigned eraseblock; /* Eraseblock number for our page. */ variable359 eraseblock = mtd_div_by_eb(offset, mtd); in mtd_nandbiterrs_init()362 page_offset, offset, eraseblock); in mtd_nandbiterrs_init()376 err = mtdtest_erase_eraseblock(mtd, eraseblock); in mtd_nandbiterrs_init()389 err = mtdtest_erase_eraseblock(mtd, eraseblock); in mtd_nandbiterrs_init()
22 wear leveling by means of moving data from eraseblock with low erase26 other flashes which have eraseblock life-cycle 100000 or more.27 However, in case of MLC NAND flashes which typically have eraseblock32 int "Maximum expected bad eraseblock count per 1024 eraseblocks"
884 start_pos.eraseblock != end_pos.eraseblock) in spinand_use_cont_read()
1956 int nand_erase_op(struct nand_chip *chip, unsigned int eraseblock) in nand_erase_op() argument1958 unsigned int page = eraseblock << in nand_erase_op()
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